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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Switching Transistor VOLTAGE 20 Volts CURRENT 3 Ampere CHT5889PT FEATURE * Small surface mounting type. (SOT-23) * Low Collector-Emitter saturation voltage. SOT-23 .041 (1.05) .033 (0.85) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) .066 (1.70) * PNP Silicon Transistor (3) (2) MARKING * 5889 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1)B C (3) .045 (1.15) .033 (0.85) E .019 (0.50) (2) Dimensions in millimeters SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICP IB Ptot Tstg Tj Note 1. FR-4 @ 100mm ,1 oz. copper traces. 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC collector current (Pulse) base current total power dissipation storage temperature junction temperature CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 - MIN. MAX. -20 -20 -7 -3.0 -5.0 -0.3 460 +150 150 V V V A A A UNIT mW C C 2008-01 -55 - RATING CHARACTERISTIC CURVES ( CHT5889PT ) ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise noted. SYMBOL BVCBO BVCEO BV EBO ICBO IEBO hFE VCEsat V BEsat Cc fT PARAMETER CONDITIONS collector-base breakdown voltage IE = 0; IC =-100 uA collector-emitter breakdown voltage IB = 0; IC =-10 mA emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturetion voltage collector capacitance transition frequency IC = 0; IE =-100 uA IE = 0; VCB = - 20 V IC = 0; VEB = - 7 V VCE = -2V; IC = -500 mA VCE = -2V; IC = -1600mA IC = -1600 mA, IB=-53 mA IC = -1600 mA, IB=-53 mA IE = ie = 0; VCB =-10 V ; f = 1 MHz IE = 500 mA; VCE = - 2 V ; MIN. -20 -20 -7 - - 200 100 - - - - MAX. - - - -100 -100 500 - -190 -1.1 40Typ. 160Typ. mV V pF MHz V V V nA nA UNIT RATING CHARACTERISTIC CURVES ( CHT5889PT ) Figure 1. Grounded Emitter Propagation Characteristics 10000 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 COLLECTOR CURRENT, -IC(mA) VCE=-2V Ta = 25 C o IC/IB=30 1000 100 COLLECTOR SATURATION VOLTAGE, -VCEsat(V) 0.1 Ta = 25oC 10 1.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.01 0.001 0.01 0.1 1.0 BASE-EMITTER on VOLTAGE, -VBE(on)(V) COLLECTOR CURRENT, -IC(A) Figure 3. DC Current Gain 1000 VCE=-2.0V DC CURRENT GAIN, hFE Ta = 25oC 100 10 0.001 0.01 0.1 1.0 10 COLLECTOR CURRENT, -IC(A) |
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